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| Model NO. | 1. UZI-TDD-3.2~3.4G-50W-170110-48VGaN | Support Network | GSM |
|---|---|---|---|
| Product Name | Uzi-Tdd-3.2~3.4G-50W-170110-48vgan | Keywords | Gallium Nitride Power Amplifier |
| Dimensions | 170*110*22 mm | Connecters | 4 Connecters |
| Working Temp | -40~+55℃ | In-Band Ripple | ≤2.5db |
| Operating Current | ≤4A | Operating Voltage | 48V |
| Production Capacity | 50000 pieces/Year | Origin | China |
The amplifier features comprehensive monitoring capabilities including power detection, VSWR measurement, temperature monitoring, and active fault reporting, ensuring optimal system performance. Equipped with ATT (Attenuator) and ALC (Automatic Level Control) functions, along with RS485 protocol support and dedicated testing software, this power amplifier provides complete operational control and real-time diagnostics.
Amplifies RF signals in cellular base stations for 2G/3G/4G/5G networks.
Optimized for reliable signal amplification for uplink and downlink paths.
Powers indoor and outdoor DAS installations in commercial buildings and stadiums.
Supports enterprise LTE/5G networks for manufacturing, ports, and mining.
| Model: UZI-TDD-3.2~3.4G-50W-170110-48VGaN | |
|---|---|
| Frequency Range | UL: 3200MHz-3400MHz | DL: 3200MHz-3400MHz |
| Max Gain | UL: 10±2dB | DL: 25±2dB |
| Maximum Output Power | DL: 47±1dBm |
| Maximum Input Level | DL: -5dBm |
| In-Band Ripple | ≤2.5dB |
| Transmission Delay | ≤2us |
| Noise Figure | UL: ≤4dB |
| EVM | ≤5% (Peak-To-Average Power Ratio 10.0DB) |
| VSWR | ≤1.4 |
| Over-Temperature Protection | Alarm/Shutdown at +85℃, Resume at 65℃ |
Superior efficiency, higher power density, and enhanced thermal performance.
Exceptional signal quality and minimal distortion across extended periods.
